An electrode called the source is at one end of the channel and an electrode called the drain is at the other end of the channel. The current flows along a semiconductor path known as the channel. The gate on the FET passes virtually no current when driven with DC as compared to the base terminal of a bipolar transistor which passes a small amount of current. The conductivity of the channel is a function of potential applied to the gate and through ohmic contacts, the source and drain terminal conductors are connected to semiconductor.Īs shown in the image below, the gate is the current control terminal. FETs are majority-charge-carrier devices that consist of an active channel through which majority charge carriers, electrons or holes, flow from the source to the drain. It contrasts their single-carrier-type operation with the dual-carrier-type operation of BJT. It is a 3-terminal unipolar device that conducts current using only one kind of charge carrier. The FET is a transistor that controls the shape and conductivity of a channel on one type of charge carrier in a semiconductor material by relying on an electric field. John Atalla produced a working device since the materials processing technology was not mature enough until 1960. In 1952, the field effect transistor of Shockley was published.
In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead.
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